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Defect compensation in doped CVD amorphous silicon

✍ Scribed by M. Hirose; M. Taniguchi; T. Nakashita; Y. Osaka; T. Suzuki; S. Hasegawa; T. Shimizu


Book ID
118331428
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
516 KB
Volume
35-36
Category
Article
ISSN
0022-3093

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Compensation in boron-doped CVD diamond
✍ Gabrysch, Markus ;Majdi, Saman ;HallΓ©n, Anders ;Linnarsson, Margareta ;SchΓΆner, πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 438 KB

## Abstract Hall‐effect measurements on single crystal boron‐doped CVD diamond in the temperature interval 80–450 K are presented together with SIMS measurements of the dopant concentration. Capacitance–voltage measurements on rectifying Schottky junctions manufactured on the boron‐doped structures