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Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals

โœ Scribed by Nakashima, S.; Mitani, T.; Senzaki, J.; Okumura, H.; Yamamoto, T.


Book ID
111963682
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
349 KB
Volume
97
Category
Article
ISSN
0021-8979

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Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the