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Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy

✍ Scribed by Kunets, Vas. P.; Morgan, T. Al.; Mazur, Yu. I.; Dorogan, V. G.; Lytvyn, P. M.; Ware, M. E.; Guzun, D.; Shultz, J. L.; Salamo, G. J.

Book ID
127189367
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
653 KB
Volume
104
Category
Article
ISSN
0021-8979

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## Abstract Pseudomorphic InGaAs/GaAs quantum wells (QWs) and self‐assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on GaAs(11__n__)A substrates. Photoreflectance spectroscopy was employed to investigate the transitions in the heterostructures. The transitions in QWs hav