## Abstract In order to find the origin of crystalline defects occurring in the preparation of InAs/GaAs quantum dots (QDs), their appearance was tracked through three different sample types designed as Schottky diodes. Specimens with a GaAs cap layer on a GaAs buffer layer as well as with an InAs
✦ LIBER ✦
Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique
✍ Scribed by M. Kaniewska; O. Engström
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 431 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0928-4931
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## Ž . A thin Si-doped layer was fabricated over a laterally selected area on a molecular beam epitaxy MBE -grown GaAs Ž . surface by 200 eV or 30 keV Si focused ion beam FIB implantation and successive overlayer regrowth using an FIBrMBE Ž . combined system. Characteristics of the buried doped la