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Deep Trapping of Carriers in a-Si: H Solar Cells Studied by Transient Photocurrents

โœ Scribed by Wieczorek, H. ;Fuhs, W.

Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
434 KB
Volume
114
Category
Article
ISSN
0031-8965

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โœ N. Christoforou; J.D. Leslie; S. Damaskinos ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science โš– 906 KB

This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce