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Deep levels of iron implanted inn-type silicon

✍ Scribed by H. Lefèvre; M. Schulz


Publisher
Springer
Year
1979
Tongue
English
Weight
228 KB
Volume
18
Category
Article
ISSN
1432-0630

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📜 SIMILAR VOLUMES


The observation of deep donor levels in
✍ S.D. Brotherton; P. Bradley; A. Gill 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 257 KB

Impurity profiling using C-V measurements has shown that following the epitaxial regrowth of implanted silicon at 600°C or 700oc a high concentration of excess donors was located near the edge of the region which had been amorphous. These results have been obtained from layers made amorphous by impl