𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Deep-level states and electrical properties of GaAs grown at 250 °C

✍ Scribed by J. Darmo; F. Dubecký; P. Kordoš; A. Förster; H. Lüth

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
364 KB
Volume
28
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of deep levels at GaAs/
Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique
✍ Kaniewska, M. ;Engström, O. ;Pacholak-Cybulska, M. ;Sadeghi, M. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 263 KB

## Abstract In order to find the origin of crystalline defects occurring in the preparation of InAs/GaAs quantum dots (QDs), their appearance was tracked through three different sample types designed as Schottky diodes. Specimens with a GaAs cap layer on a GaAs buffer layer as well as with an InAs

Correlation Between the Electrical Prope
Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures
✍ F. Fabreguette; L. Imhoff; M. Maglione; B. Domenichini; M. C. Marco de Lucas; P. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 616 KB

Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal±organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450 C to