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Effect of deep levels induced by electron irradiation upon the charge transport mechanism and the pressure-dependent electrical properties of forward-biased p+-n-n+ GaAs diodes

✍ Scribed by V.N. Brudnyi; V.I. Gaman; V.M. Diamond


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
675 KB
Volume
31
Category
Article
ISSN
0038-1101

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