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Deep level generation in nitrogen-doped float-zoned silicon

✍ Scribed by G.I. Voronkova; A.V. Batunina; L. Moiraghi; V.V. Voronkov; R. Falster; M.G. Milvidski


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
157 KB
Volume
253
Category
Article
ISSN
0168-583X

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## Abstract Dislocation locking experiments have been used to investigate nitrogen‐doped float‐zone silicon (NFZ‐Si). Experiments on NFZ‐Si with a nitrogen concentration of 2.2 Γ— 10^15^ cm^–3^ were carried out at different annealing temperatures (550–830 Β°C) for different annealing times (0–1500 ho