✦ LIBER ✦

Decrease in the binding energy of donors in heavily doped GaN:Si layers

✍ Scribed by Osinnykh, I. V.; Zhuravlev, K. S.; Malin, T. V.; Ber, B. Ya.; Kazantsev, D. Yu.

Book ID: 127378831
Publisher: Springer
Year: 2014
Tongue: English
Weight: 371 KB
Volume: 48
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782614090176

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Activation energies of Si donors in GaN

✍ Götz, W. (author);Johnson, N. M. (author);Chen, C. (author);Liu, H. (author);Kuo 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 388 KB

Activation energies of Si donors in GaN

✍ Götz, W. (author);Johnson, N. M. (author);Chen, C. (author);Liu, H. (author);Kuo 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 388 KB

A model of reduction of oxidation-enhanc

A model of reduction of oxidation-enhanced diffusion in heavily doped Si layers

✍ O. V. Aleksandrov; N. N. Afonin 📂 Article 📅 2003 🏛 Springer 🌐 English ⚖ 96 KB

Shallow donors in GaN—The binding energy

Shallow donors in GaN—The binding energy and the electron effective mass

✍ B.K. Meyer; D. Volm; A. Graber; H.C. Alt; T. Detchprohm; A. Amano; I. Akasaki 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 366 KB

The Residual Donor Binding Energy in AlG

The Residual Donor Binding Energy in AlGaN Epitaxial Layers

✍ Steude, G. ;Hofmann, D. M. ;Meyer, B. K. ;Amano, H. ;Akasaki, I. 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 135 KB

The presence of isolated hydrogen donors

The presence of isolated hydrogen donors in heavily carbon-doped GaAs

✍ Hiroshi Fushimi; Kazumi Wada 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 642 KB