Abstract
Bis(dimethylglyoximato)palladium (II) complex thin films of polycrystalline structure were prepared by sublimation in a vacuum at 140ยฐC on pโSi substrates. After carrying out the characterisation of the prepared films by Xโray diffraction and Xโray fluorescence methods, AlโcomplexโSi MIS devices were fabricated. The constructed MIS structure was characterised by measuring the capacitance as a function of gate voltage at 1 MHz. The dependence of dcโcurrent density on gate voltage and temperature in the range of 293 โ 328 K of the MIS device was measured. It was found that the experimental data follow the trapโchargeโlimited spaceโchargeโlimited conductivity mechanism, from which the total concentration and the exponential energy distribution of the trap density were determined. In general, the measured quantities suggest that the conduction can be realised by thermally assisted hopping between localised states bundled in a very narrow band lying energetically near the mobility band edge. Moreover, results show that it is possible to use a film of the complex in applications of lowโk dielectric material. (ยฉ 2007 WILEYโVCH Verlag GmbH & Co. KGaA, Weinheim)