Inhaltsu È bersicht. Die Ammoniakate des Galliumtrifluorids Ga(NH 3 )F 3 und Ga(NH 3 ) 2 F 3 entstehen bei der Oxidation von Gallium mit NH 4 HF 2 (Ga : NH 4 HF 2 = 1 : 1,5) bzw. NH 4 F (Ga : NH 4 F = 1 : 3,5) bei 450 °C bzw. 400 °C neben anderen Produkten als farblose Einkristalle. Ga(NH 3 )F 3 kri
Das Monoammoniakat des Galliumamidfluorids: Ga(NH3)(NH2)F2
✍ Scribed by Meike Roos; Gerd Meyer
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- German
- Weight
- 105 KB
- Volume
- 625
- Category
- Article
- ISSN
- 0372-7874
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✦ Synopsis
Inhaltsu È bersicht. Durch Oxidation von elementarem Gallium mit NH 4 F (in Gegenwart von Indium) konnten bei 325 °C u. a. Einkristalle von Ga(NH 2 )F 2 ´NH 3 erhalten und die Kristallstruktur aufgekla È rt werden [monoklin, C2/m (Nr. 12), a . Es liegen Schichten aus eckenverknu È pften [Ga(NH 3 ) 2 F 4 ]-und [Ga(NH 2 ) 2 F 4 ]-Oktaedern vor. IR-Untersuchungen belegen das Vorliegen der Amidgruppe.
The Monoammoniate of Gallium Amide Fluoride, Ga(NH 3 )(NH 2 )F 2 Abstract. The oxidation of gallium metal with NH 4 F leads at 325 °C in the presence of indium to single crystals of Ga(NH 2 )F 2 ´NH 3 [monoclinic, C2/m (no. 12), a = 1053.1(1), b = 557.4(1), c = 484.2(3) pm, b = 90.04( )]. The crystal structure is built up from layers of corner-bridged [Ga(NH 3 ) 2 F 4 ] and [Ga(NH 2 ) 2 F 4 ] octahedra, respectively. The infrared spectrum proves the existence of the amide group in Ga(NH 2 )F 2 ´NH 3 .
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