𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Damaging process of α-SiC under electron irradiation studied with electron microscopy and spectroscopy

✍ Scribed by S. Muto; T. Tanabe; T. Shibayama; H. Takahashi


Book ID
114165744
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
214 KB
Volume
191
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Transmission electron microscopy studies
✍ S.J. Lee; J. Vicens 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 642 KB

Hot-pressed SiC with small additions of aluminium has been deformed at 1600 °C by three-point bending and studied by transmission electron microscopy. This paper reports observations of Shockley partials ~ (10 i 0). These dislocations result from the activation of dissociated dislocation sources loc

Inhomogeneities of InGaN/GaN MOVPE multi
✍ Kret, S. ;Ivaldi, F. ;Sobczak, K. ;Czernecki, R. ;Leszczyński, M. 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 458 KB

## Abstract The structural investigation of InGaN/GaN:Si multiple quantum well (MQW) samples grown by low‐pressure metal‐organic vapor phase epitaxy (LP‐MOVPE) in a two temperatures (2__T__) process on high‐pressure GaN mono‐crystalline substrates is performed by transmission electron microscopy (T