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Damage immune field effect transistors with vacuum gate dielectric

✍ Scribed by Han, Jin-Woo; Ahn, Jae-Hyuk; Choi, Yang-Kyu

Book ID
118167116
Publisher
AVS (American Vacuum Society)
Year
2011
Tongue
English
Weight
585 KB
Volume
29
Category
Article
ISSN
1520-8567

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Dielectric layers for organic field effe
Dielectric layers for organic field effect transistors as gate dielectric and surface passivation
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## Abstract Organic field effect transistors with the organic semiconductor pentacene, using silicon substrates, were successfully built on conventional inorganic dielectrics like silicon dioxide or silicon nitride. They can drive drain currents up to 15 mA. Beyond that, polymer films were investig