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Damage formation in InP due to high electronic excitation by swift heavy ions

✍ Scribed by W. Wesch; O. Herre; P.I. Gaiduk; E. Wendler; S. Klaumünzer; P. Meier

Book ID
114170424
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
741 KB
Volume
146
Category
Article
ISSN
0168-583X

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Effect of high electronic excitation in
Effect of high electronic excitation in swift heavy ion irradiated semiconductors
✍ W. Wesch; A. Kamarou; E. Wendler; A. Undisz; M. Rettenmayr 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 413 KB

The damage evolution due to high electronic energy deposition during 375 MeV Xe and 593 MeV Au ion irradiation was studied in the semiconductors InP, GaP, GaAs, AlAs and Ge using RBS and TEM. In InP the high electronic energy deposition leads to the formation of amorphous tracks. In the other materi