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Damage buildup and removal in Ca-ion-implanted GaN

โœ Scribed by C. Liu; M. Schreck; A. Wenzel; B. Mensching; B. Rauschenbach


Book ID
106023019
Publisher
Springer
Year
2000
Tongue
English
Weight
175 KB
Volume
70
Category
Article
ISSN
1432-0630

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We use molecular dynamics (MD) simulations to study the effect of the implantation angle on the damage produced during ion beam irradiation of GaN. We bombard 5 keV Er ions at perfect wurtzite GaN with incident angles of 0 โ€ข -22 โ€ข angle against the [0 0 0 1] crystal axis. The simulations reproduce t