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Ca and O ion implantation doping of GaN

✍ Scribed by J. C. Zolper; R. G. Wilson; S. J. Pearton; R. A. Stall


Book ID
126073008
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
285 KB
Volume
68
Category
Article
ISSN
0003-6951

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We have investigated the crystalline quality of thulium-doped GaN obtained either by in situ doping during MBE growth or by ionbeam implantation of MOCVD GaN layers. Both types of samples display the typical sharp intra-4f shell emission lines of Tm 3+ ions in the blue and infrared spectral regions.