In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is ba
β¦ LIBER β¦
CW measurement of HBT thermal resistance
β Scribed by Dawson, D.E.; Gupta, A.K.; Salib, M.L.
- Book ID
- 114534824
- Publisher
- IEEE
- Year
- 1992
- Tongue
- English
- Weight
- 470 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Influence of base resistance on extracti
β
Bo Han; Tianshu Zhou; Xiangming Xu; Pingliang Li; Jianjun Gao
π
Article
π
2012
π
John Wiley and Sons
π
English
β 880 KB
Thermal resistance measurement protocols
β
M. O'Flaherty; C. Cahill; K. Rodgers; O. Slattery
π
Article
π
1998
π
Elsevier Science
π
English
β 723 KB
Thermal resistance measurement of avalan
β
McAvoy, B.R.
π
Article
π
1971
π
IEEE
π
English
β 358 KB
Thermal Time Constant Extraction for HBT
β
Franz X. Sinnesbichler; Gerhard R. Olbrich
π
Article
π
2003
π
Elsevier Science
π
English
β 82 KB
Quick derivation of high-power thermal r
β
C. L. Tan; P. Hui; Beiping Yan; Hong Wang; Haiqun Zheng; Hong Yang; K. Radhakris
π
Article
π
2001
π
John Wiley and Sons
π
English
β 99 KB
## Abstract A method is presented for the quick derivation of highβpower thermal resistance values using an existing measurement technique and a theoretical formula. It first derives the lowβpower thermal resistance value, and then substitutes this value into the general form for the dependence of
Measurement of thermal resistance using
β
Webb, P.W.
π
Article
π
1987
π
The Institution of Electrical Engineers
β 823 KB