✦ LIBER ✦

C–V and DLTS studies of radiation induced Si–SiO2 interface defects

✍ Scribed by I. Capan; V. Janicki; R. Jacimovic; B. Pivac

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Radiation induced defects on Si-SiO2inte

✍ I. Petr 📂 Article 📅 1985 🏛 Springer 🌐 English ⚖ 225 KB

Interface defects and induced voltage co

✍ K.F. Knott 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 867 KB

DLTS study of annihilation of oxidation

✍ N. Shashank, Sanjeev K. Gupta, K. V. Madhu, J. Akhtar, R. Damle 📂 Article 📅 2011 🏛 Springer-Verlag 🌐 English ⚖ 241 KB

Radiation-Induced Trivalent Silicon Defe

✍ Lenahan, P. M.; Brower, K. L.; Dressendorfer, P. V.; Johnson, W. C. 📂 Article 📅 1981 🏛 IEEE 🌐 English ⚖ 378 KB

Three-level charge pumping study of radi

✍ Jean-Luc Autran; Bernard Balland; Daniel Babot 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 381 KB

Carrier mobility in inversion layers and

✍ J. Kassabov; E. Atanassova; E. Goranova 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 642 KB