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Cutoff frequency and optimum noise figure of GaAs optically controlled FET

✍ Scribed by Srikanta Bose; Mridula Gupta; R. S. Gupta

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
138 KB
Volume
26
Category
Article
ISSN
0895-2477

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✦ Synopsis

An analytical model for the cutoff frequency and optimum noise figure of an optically controlled GaAs MESFET suitable for microwa¨e integrated circuits and high-frequency optical communication systems is presented. The model calculates the cutoff frequency and optimum noise figure under dark and illuminated conditions. The significant feature is that, under optically controlled operation, the cutoff frequency increases, and a drastic reduction in the optimum noise figure is obtained. Some of the predicted results under dark conditions are compared with the data a¨ailable in the literature to ¨alidate our proposed model.

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## Abstract An accurate charge‐control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The small‐signal parameters, and the drain and gate‐noise sources are calculated to determine