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Current-voltage characteristics of in situ doped polycrystalline diamond field-effect transistors

✍ Scribed by Tessmer, A.J.; Plano, L.S.; Dreifus, D.L.

Book ID
114534930
Publisher
IEEE
Year
1992
Tongue
English
Weight
263 KB
Volume
39
Category
Article
ISSN
0018-9383

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✍ Ching-Sung Lee; Wei-Chou Hsu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 265 KB

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have