Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

✍ Scribed by Dashiell, M.W.; Troeger, R.T.; Rommel, S.L.; Adam, T.N.; Berger, P.R.; Guedj, C.; Kolodzey, J.; Seabaugh, A.C.; Lake, R.

• Book ID: 114538271
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 130 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.861581