Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

✍ Scribed by Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

• Book ID: 118123370
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 470 KB
• Volume: 552
• Category: Article
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2012.11.007