Au/GaN/n-GaAs structure has been fabricated by the electrochemically anodic nitridation method for providing an evidence of achievement of stable electronic passivation of n-doped GaAs surface. The change of the electronic properties of the GaAs surface induced by the nitridation process has been st
✦ LIBER ✦
Current-voltage characteristics of an Au/Pb2CrO5/Cr sandwiched-structure device
✍ Scribed by K. Toda; S. Yoshida; H. Ikenaga
- Publisher
- Springer
- Year
- 1993
- Tongue
- English
- Weight
- 170 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0261-8028
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✦ Synopsis
Pb2CrO 5 is a new type of optoelectronic material for visible and ultraviolet radiation detectors [1,2]. Lateral photodetectors using semi-insulating Pb2CrO5 thin films were characterized by low dark current, high-speed response, simple fabrication and suitability for integration of sensor elements [3,4]. In these devices a pair of Au electrodes were evaporated on a film surface, and more than two Au/Pb2CrO5 contacts were connected in series. For this reason the current-voltage characteristics of a single Au/Pb2CrO5 Schottky barrier have not been measured.
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