Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

✍ Scribed by Seoane, N.; Martinez, A.; Brown, A.R.; Barker, J.R.; Asenov, A.

• Book ID: 114619652
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 897 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2009.2021357