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Current SiC technology for power electronic devices beyond Si

โœ Scribed by H. Matsunami


Book ID
108207525
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
81 KB
Volume
83
Category
Article
ISSN
0167-9317

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Performance improvement of CMOS device u
โœ N. Kimizuka; Y. Yasuda; T. Abe; S. Fujieda; T. Iwamoto; I. Yamamoto; K. Takano; ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 716 KB

We have developed low standby power (LSTP) FET utilizing HfSiON dielectric. Due to optimizations of channel and offset spacer structure, we could put threshold voltage of pFET into the place of LSTP region, working through the Fermilevel-pinning effect. This resulted in the reduction of propagation