✦ LIBER ✦

Current in semiconductors with position-dependent band gap and electron affinity

✍ Scribed by Marshak, A. H. ;van Vliet, K. M.

Book ID: 105372381
Publisher: John Wiley and Sons
Year: 1977
Tongue: English
Weight: 306 KB
Volume: 42
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210420131

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Law of the junction for degenerate mater

Law of the junction for degenerate material with position-dependent band gap and electron affinity

✍ Alan H. Marshak; Ritu Shrivastava 📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 339 KB

Electron beam-induced current in direct

Electron beam-induced current in direct band-gap semiconductors

✍ B. Akamatsu 📂 Article 📅 1981 🏛 American Institute of Physics 🌐 English ⚖ 636 KB

Temperature dependence of band gaps in H

Temperature dependence of band gaps in HgCdTe and other semiconductors

✍ Srinivasan Krishnamurthy; A. -B. Chen; A. Sher; M. Van Schilfgaarde 📂 Article 📅 1995 🏛 Springer US 🌐 English ⚖ 515 KB

Generalized electric current density in

Generalized electric current density in materials with position-dependent band structure

✍ R. Kishore 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 379 KB

Pressure Dependence of Band Gaps and Dee

Pressure Dependence of Band Gaps and Deep Centers in Chalcopyrite Semiconductors

✍ In-Hwan Choi; Peter Y. Yu 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 302 KB 👁 2 views

We present a review of the effect of high pressure on the electronic, optical and defect properties in chalcopyrite semiconductors with the formula I±III±VI 2 . We show that the linear pressure coefficients of the band gap in these materials are not constant. While the bulk moduli of this family of

Atomistic Origin and Pressure Dependence

Atomistic Origin and Pressure Dependence of Band Gap Variation in Semiconductor Nanocrystals

✍ Ouyang, G.; Sun, C. Q.; Zhu, W. G. 📂 Article 📅 2009 🏛 American Chemical Society 🌐 English ⚖ 143 KB