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Current-gain enhancement in lateral p-n-p transistors by an optimized gap in the n+buried layer

✍ Scribed by Bhat, K.N.; Achuthan, M.K.

Book ID: 114592340
Publisher: IEEE
Year: 1977
Tongue: English
Weight: 773 KB
Volume: 24
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1977.18710

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