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CuInSe2 films for photovoltaics and photoelectrochemistry

โœ Scribed by D. Haneman; S.N. Sahu; R.D.L. Kristensen


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
915 KB
Volume
163
Category
Article
ISSN
0040-6090

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High densities of both bulk and interface states were found in CdZnS/ CuInSe2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced t