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Crystallization Processes of Amorphous Se: Te Thin Films Observed with Electrical Measurements

โœ Scribed by Naito, H. ;Nasu, T. ;Kurosawa, K. ;Matsushita, T. ;Okuda, M.

Book ID
105383624
Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
495 KB
Volume
136
Category
Article
ISSN
0031-8965

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The effect of Te isoelectronic substitut
The effect of Te isoelectronic substitution on the electrical and optical properties of the Geโ€”Sโ€”Se amorphous chalcogenide system studied in thin films
โœ K Sedeek; EA Mahmoud; A Said; AM Nassar ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 311 KB

The results are presented of a study of the electrical and optical properties of vacuum evaporated amorphous thin films in the Ge0S0Se system. The effect of Te isoelectronic substitution either completely for S to give Ge 2.5 Te 2.5 Se 95 and Ge 5 Te 5 Se 90 or partially for Se to yield Ge 2.