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Crystallization of germanium-silicon solid solution from the vapour phase in microgravity conditions

โœ Scribed by V.S. Zemskov; I.N. Belokurova; B.S. Vasilina; O.I. Mavrin


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
324 KB
Volume
3
Category
Article
ISSN
0273-1177

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Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place