The effect of laser fluence on the crystallization of amorphous silicon irradiated by a frequency-doubled Nd:YAG laser is studied both theoretically and experimentally. An effective numerical model is set up to predict the melting threshold and the optimized laser fluence for the crystallization of
β¦ LIBER β¦
Crystallization of amorphous silicon thin films: comparison between experimental and computer simulation results
β Scribed by J. Kioseoglou; Ph. Komninou; G. P. Dimitrakopulos; I. P. Antoniades; M. K. Hatalis; Th. Karakostas
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 451 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0022-2461
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