Crystallization of AgGaS2 melts enriched with Ag2S and Ga2S3
β Scribed by K. A. Kokh; E. F. Sinyakova; A. A. Politov
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 219 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
In this work we consider experiments with directed crystallization of melts with slight deviation from stoichiometric composition of AgGaS~2~. The evolution of melt composition was calculated for both experiments using measured chemical composition of the solid phase. Also the difference in unit cell parameters and luminescence spectra for AgGaS~2~ grown from the melts was found. Both monocrystal samples and samples synthesized from elementary Ag, Ga and S were used for thermal analyses. Obtained data suggests that different ways of preparing the samples are responsible for defects concentration and thus for so wide range (70Β°C) of melting temperatures reported in scientific literature. (Β© 2008 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
Influence of the illumination with energy above band gap on optical properties of the thin (x)(Ga~2~S~3~)(1-x)(GeS~2~) films prepared with Pulsed Laser Deposition was investigated. Observed photo-induced bleaching is due to photo-oxidation of Ge and possible Ga atoms. Increasing of Ga content in the