<p> This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metalβsemiconductor junctions, heterojunctions, MIS
Crystalline Semiconducting Materials and Devices
β Scribed by E. Mooser (auth.), Paul N. Butcher, Norman H. March, Mario P. Tosi (eds.)
- Publisher
- Springer US
- Year
- 1986
- Tongue
- English
- Leaves
- 657
- Series
- Physics of Solids and Liquids
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
This book is concerned primarily with the fundamental theory underlying the physical and chemical properties of crystalIine semiconductors. After basic introductory material on chemical bonding, electronic band structure, phonons, and electronic transport, some emphasis is placed on surface and interfacial properties, as weil as effects of doping with a variety of impurities. Against this background, the use of such materials in device physics is examined and aspects of materials preparation are discussed briefty. The level of presentation is suitable for postgraduate students and research workers in solid-state physics and chemistry, materials science, and electrical and electronic engineering. Finally, it may be of interest to note that this book originated in a College organized at the International Centre for Theoretical Physics, Trieste, in Spring 1984. P. N. Butcher N. H. March M. P. Tosi vii Contents 1. Bonds and Bands in Semiconductors 1 E. Mooser 1. 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 2. The Semiconducting Bond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1. 3. Bond Approach Versus Band Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1. 4. Construction of the Localized X by Linear Combination of n Atomic Orbitals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1. 5. The General Octet Rule . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1. 6. The Aufbau-Principle of the Crystal Structure of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 1. 7. A Building Principle for Polyanionic Structures . . . . . . . . . . . . . . . . . . . . . . 29 I. H. Structural Sorting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 1. 9. Chemical Bonds and Semiconductivity in Transition-Element Compounds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 1. 10. Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 2. Electronic Band Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 G. Grosso 2. 1. Two Different Strategies for Band-Structure Calculations . . . . . . . 55 2. 2. The Tight-Binding Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
β¦ Table of Contents
Front Matter....Pages i-xviii
Bonds and Bands in Semiconductors....Pages 1-54
Electronic Band Structure....Pages 55-102
Phonons....Pages 103-130
The Theory of Electron Transport in Crystalline Semiconductors....Pages 131-194
Dynamics of Localized Phonon Modes....Pages 195-216
Shallow Impurity States in Semiconductors: Theoretical Aspects....Pages 217-241
Electronic States and Structural Properties of Deep Centers in Semiconductors....Pages 243-304
Impurity Bands....Pages 305-354
Special Semiconducting Materials....Pages 355-395
The Electronic Structure of Surfaces and Interfaces....Pages 397-423
Space-Charge Layers at Semiconductor Interfaces....Pages 425-481
Theory of Surface Waves....Pages 483-506
Basic Properties in Semiconductor Devices....Pages 507-548
Semiconductor Materials and Structures for Optical-Communication Devices....Pages 549-590
Ion Implantation and Annealing....Pages 591-622
Preparation and Applications of Amorphous Silicon....Pages 623-639
Back Matter....Pages 641-645
β¦ Subjects
Solid State Physics; Spectroscopy and Microscopy; Condensed Matter Physics; Crystallography; Electrical Engineering; Optical and Electronic Materials
π SIMILAR VOLUMES
<p><p>This is an exciting stage in the development of organic electronics. It is no longer an area of purely academic interest as increasingly real applications are being developed, some of which are beginning to come on-stream. Areas that have already been commercially developed or which are under
Semiconductor Material and Device Characterization is the only book on the market devoted to the characterization techniques used by the modern semiconductor industry to measure diverse semiconductor materials and devices. It covers the full range of electrical and optical characterization methods w
This Third Edition updates a landmark text with the latest findingsThe Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not o
The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V dev
<p>This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic