Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts
โ Scribed by Tsuyoshi Nishimura; Osamu Nakatsuka; Shingo Akimoto; Wakana Takeuchi; Shigeaki Zaima
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 771 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0167-9317
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๐ SIMILAR VOLUMES
In this paper we investigate the global asymptotic stability of the recursive , n s 0, 1, . . . , where โฃ, โค, โฅ G 0. We show that the unique positive equilibrium point of the equation is a global attractor with a basin that depends on the conditions posed on the coefficients.
ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the