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Crystal Structures of III–V Semiconductors in a Quantum-Statistical ab Initio Theory

✍ Scribed by S. Olszewski; M. Dubejko

Publisher
John Wiley and Sons
Year
1971
Tongue
English
Weight
307 KB
Volume
46
Category
Article
ISSN
0370-1972

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✦ Synopsis

Abstract

Using a quantum‐statistical ab initio theory it is shown that the radii of weakly interacting or zero‐valent crystal ions can be responsible for the structure of a III–V semiconducting crystal, whereas the non‐ionic character of the semiconductor is due to the charge polarization in the crystal. The polarization shifts the minima of the electron dnsity from the ionic boundaries towards inside of the negative ions giving practically neutral atomic systems. The differences between the structures of the Al and Ga compounds on the one hand, and those of the La compounds on the other, are explained by the theory.

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