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Crystal orientation of CdTe film on GaAs by metal–organic chemical vapor deposition

✍ Scribed by Lu, P.-Y.

Book ID
121255833
Publisher
AVS (American Vacuum Society)
Year
1986
Tongue
English
Weight
716 KB
Volume
4
Category
Article
ISSN
0734-2101

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## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The