Comparison of boron- and gallium-doped p
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S. W. Glunz; S. Rein; J. Knobloch; W. Wettling; T. Abe
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Article
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1999
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John Wiley and Sons
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English
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A set of p-type Czochralski (Cz) silicon materials grown by Shin-Etsu Handotai was used for a comprehensive investigation, including carrier lifetime measurements and fabrication of high-eciency solar cells at Fraunhofer ISE. The set of dierent materials consists of gallium and boron doped wafers gr