## Abstract A method is described for the preparation of cross‐sectional samples of thin films for transmission electron microscopy. The technique produces larger amounts of thin region as compared with ion milling and eliminates the problems associated with ion beam damage. The requirement is that
Cross-sectional nanoindentation: a new technique for thin film interfacial adhesion characterization
✍ Scribed by J.M. Sánchez; S. El-Mansy; B. Sun; T. Scherban; N. Fang; D. Pantuso; W. Ford; M.R. Elizalde; J.M. Martı́nez-Esnaola; A. Martı́n-Meizoso; J. Gil-Sevillano; M. Fuentes; J. Maiz
- Book ID
- 104403965
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 284 KB
- Volume
- 47
- Category
- Article
- ISSN
- 1359-6454
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✦ Synopsis
AbstractÐInterfacial adhesion is becoming a critical material property for improving the reliability of multilayer thin ®lm structures used in microelectronics. Cross-sectional nanoindentation (CSN) is a new mechanical test especially designed for measuring the fracture toughness of thin ®lm interfaces. Interfacial fracture is achieved by nanoindentation in the structure cross-section. A model based on the elastic plate theory has been developed to calculate numerically the interfacial critical energy release rate (G ci ) for cer-amic±ceramic systems from CSN test results. The model inputs are the thin ®lm elastic properties, thin ®lm thickness, interfacial crack area and maximum thin ®lm de¯ection during the test. Closed form analytical solutions, obtained for two limiting cases, are consistent with the numerical approach. This technique has been successfully applied to silicon nitride±silicon oxide thin ®lms, commonly used as electrical isolators in microelectronic devices.
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