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Cross-sectional AFM study of etching kinetics of oxidized porous silicon

✍ Scribed by Poler, J. C. ;Schmedake, Thomas A. ;Ye, Weijun

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
334 KB
Volume
201
Category
Article
ISSN
0031-8965

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## Abstract Scanning probe microscopy is presently a useful tool to study a morphology of porous semiconductors. However, it serves to visualize existing roughness features of porous samples rather then to obtain some analytical data on shape, diameter and other geometrical parameters of the pores.