✦ LIBER ✦

Critical thickness in strained-layer GaInAs/GaAs quantum well lasers

✍ Scribed by Mantz, J.; Shieh, C.; Lee, H.; Ackley, D.; Engelmann, R.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Critical layer thickness in In0.2Ga0.8As

✍ Fritz, I. J.; Gourley, P. L.; Dawson, L. R. 📂 Article 📅 1987 🏛 American Institute of Physics 🌐 English ⚖ 529 KB

Critical layer thickness in MOCVD grown

✍ Xiaobo Zhang; Olivier Briot; Bernard Gil; Roger Aulombard 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 275 KB

1.17-μm highly strained GaInAs-GaAs quan

✍ Schlenker, D.; Miyamoto, T.; Chen, Z.; Koyama, F.; Iga, K. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 54 KB

InGaAs-AlGaAs-GaAs strained-layer quantu

✍ Han, H.; Forbes, D.V.; Coleman, J.J. 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 660 KB

Design and realization of InGaAs/GaAs st

✍ S. Hansmann; H. Burkhard; K. Dahlhof; W. Schlapp; R. Losch; H. Nickel; H. Hillme 📂 Article 📅 1992 🏛 Optical Society of America 🌐 English ⚖ 706 KB

Submilliamp threshold InGaAs-GaAs strain

✍ Chen, T.R.; Eng, L.; Zhao, B.; Zhuang, Y.H.; Sanders, S.; Morkoc, H.; Yariv, A. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 670 KB