Ion-implantation issues in the formation
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E. Simoen; A. Satta; A. DβAmore; T. Janssens; T. Clarysse; K. Martens; B. De Jae
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Article
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2006
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Elsevier Science
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English
β 361 KB
This paper provides an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of dopant activation, diffusion and defect removal. As will be shown, for the case of p + implantations, the application of rapid thermal anneal