Critical behavior of transport and magnetotransport in a 2D electron system in Si near the metal-insulator transition
✍ Scribed by D. A. Knyazev; O. E. Omel’yanovskii; V. M. Pudalov; I. S. Burmistrov
- Book ID
- 110168378
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2007
- Tongue
- English
- Weight
- 212 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0021-3640
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Contrary to some recent observations of a gradual increase of 1/__f__ ‐noise with decreasing carrier density in a 2DEG in Si and a 2DHG in GaAs, we have observed a non‐monotonic variation of noise power in a 2DEG in Si. We discuss the role of the following effects in the noise near the
## Abstract We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the