๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Crested barrier in the tunnel stack of non-volatile memories

โœ Scribed by Fernanda Irrera; Giuseppina Puzzilli

Book ID
108210528
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
296 KB
Volume
45
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Statistical characterization of the memo
Statistical characterization of the memory effect in polyfluorene based non-volatile resistive memory devices
โœ Bao Lei; Wei Lek Kwan; Yue Shao; Yang Yang ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 775 KB

Non-volatile resistive memory devices based on a polyfluorene layer sandwiched between two electrodes were studied. The working mechanism was ascribed to the formation of metallic filaments. We characterized the switching probability of multiple devices and the consistency of the switching capabilit