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Cree to acquire GaN substrate and epi business


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
737 KB
Volume
17
Category
Article
ISSN
0961-1290

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High-quality oxide formed by evaporation
โœ S. Nozaki; S. Kimura; A. Koizumi; H. Ono; K. Uchida ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 301 KB

Although good gate oxide of SiO 2 is usually formed by high-temperature thermal oxidation, lowering the temperature for formation of SiO 2 is mandatory for future Si VLSIs, in particular, for flexible ICs, the demand for which has been increasing every year. Vacuum evaporation of SiO powder is an id