The brittleΒ±ductile transition (BDT) has been studied in silicon single crystals of different orientations and purities. It is shown that the BDT temperature at a given loading rate can be significantly varied depending on structural parameters, especially the density of cleavage defects (steps, F F
Crack tip dislocation emission and nanoscale deformation fields in silicon
β Scribed by C. W. Zhao; Y. M. Xing; P. C. Bai; J. J. Li; Q. L. Liu; Y. G. Du; M. H. Liu
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 509 KB
- Volume
- 105
- Category
- Article
- ISSN
- 1432-0630
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