𝔖 Bobbio Scriptorium
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Cover Picture: phys. stat. sol. (a) 205/7

Book ID
105365380
Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
341 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The cover picture illustrates electroluminescence results for nonpolar a ‐plane 360 nm UV LEDs grown over high quality SLEO templates reported by Bilge Imer et al. (p. 1705): To overcome the obstacle of high defect densities in these devices, nonpolar a ‐plane GaN films were grown by sidewall lateral epitaxial overgrowth (SLEO) technique with a threading dislocation density of ∼10^6^–10^7^ cm^–2^. The device structure is depicted at the upper right. For comparison, 360 nm GaN/AlGaN multiple quantum well ultraviolet light emitting diodes were grown over planar a ‐plane films and reduced defect density SLEO films with metalorganic chemical vapor deposition and processed together. The photographs illustrate the emission of SLEO a ‐plane on wafer LEDs under the microscope. Compared with the defected planar films, the high quality SLEO material yielded ∼100–300 times higher external quantum efficiency and ∼2.5–3 times lower series resistance with an electroluminescence peak at 360 nm (lower left). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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