## Abstract The lower part of the cover picture illustrates the bottom‐contact design of an organic field effect transistor (OFET), thus showing the currently favoured approach for building such devices with an organic semiconductor as the active layer. Whereas the manufacturing of the three electr
Cover Picture: phys. stat. sol. (a) 205/1
- Book ID
- 105365373
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 355 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The current issue includes two Feature Articles, each presenting a different perspective on optoelectronic devices based on III–V semiconductors and pentanary alloys.S. Calvez et al. (pp. 85–92) report on the numerous possibilities and applications for the concept of surface‐normal operating devices, such as vertical surface‐emitting lasers with internal and external cavities and semiconductor saturable absorber mirrors. The article by A. Krier et al. (pp. 129–143) focuses on the development of LEDs and lasers for the mid‐infrared spectral range with different approaches and designs for utilizing narrow‐gap materials. Among them are semiconductor ring‐resonator lasers based on InAs~0.42~Sb~0.18~P~0.40~/InAs double heterostructures, which operate via a whispering gallery mode. The cover picture illustrates a calculation of such a typical mode in a hollow metal resonator. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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