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Coulomb interactions in a low-voltage focussed ion beam system

✍ Scribed by K. Marianowski; T. Ohnweiler; E. Plies

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
254 KB
Volume
645
Category
Article
ISSN
0168-9002

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Aluminum nitride (AlN) films, using a dual ion beam sputtering, were prepared over the argon ion beam voltage ranging from 800 to 1200 V at room temperature. The AlN films were (0 0 2) and (1 0 0) planes. Excepting for operating at 1000 V, the AlN films exhibited the (0 0 2) preferred orientation. T