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Coulomb gap, its critical behavior, and the metal-insulator transition in doped semiconductors

โœ Scribed by Andrei G. Zabrodskii


Book ID
112783953
Publisher
Springer
Year
1996
Tongue
English
Weight
180 KB
Volume
46
Category
Article
ISSN
0011-4626

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## Abstract We show for __n__ โ€type semiconductors, using Ge:As and 4__H__ โ€SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulatorโ€“metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co